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【国际标准】 Semiconductor devices - Micro-electromechanical devices - Part 31: Four-point bending test method for interfacial adhesion energy of layered MEMS materials
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标准简介适用范围：
暂无
标准号：
IEC 62047-31:2019 EN
标准名称：
Semiconductor devices - Micro-electromechanical devices - Part 31: Four-point bending test method for interfacial adhesion energy of layered MEMS materials
英文名称：
Semiconductor devices - Micro-electromechanical devices - Part 31: Four-point bending test method for interfacial adhesion energy of layered MEMS materials标准状态：
现行-
发布日期：
2019-04-05 -
实施日期：
出版语种：
EN
- 其它标准
- 上一篇： IEC 62047-30:2017 EN 82a50db2 Semiconductor devices - Micro-electromechanical devices - Part 30: Measurement methods of electro-mechanical conversion characteristics of MEMS piezoelectric thin film
- 下一篇： IEC 62047-32:2019 EN-FR 55815c12 Semiconductor devices - Micro-electromechanical devices - Part 32: Test method for the nonlinear vibration of MEMS resonators
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